• DocumentCode
    3470491
  • Title

    High-performance 1.06 /spl mu/m vertical-cavity surface-emitting lasers with lnGaAs/GaAsP strain-compensated quantum wells

  • Author

    Hou, H.Q. ; Choquette, Kent D. ; Hammons, B.E. ; Geib, Kent M.

  • Author_Institution
    Sandia National Laboratories
  • Volume
    11
  • fYear
    1997
  • fDate
    18-23 May 1997
  • Firstpage
    288
  • Lastpage
    289
  • Keywords
    Dielectrics; Gallium arsenide; Indium phosphide; Mirrors; Surface emitting lasers; Surface waves; Temperature; Threshold current; Vertical cavity surface emitting lasers; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 1997. CLEO '97., Summaries of Papers Presented at the Conference on
  • Conference_Location
    Baltimore, MD, USA
  • Print_ISBN
    0-7803-4125-2
  • Type

    conf

  • DOI
    10.1109/CLEO.1997.603156
  • Filename
    603156