• DocumentCode
    3470529
  • Title

    Extremely low threshold InGaSsp/InP DFB PPIBH laser diode

  • Author

    Ohkura, Y. ; Takemoto, Ayumi ; Yoshida, Norihiro ; Isshiki, Kenji ; Kakimoto, Shinji ; Namizaki, H. ; Susaki, W.

  • fYear
    1988
  • fDate
    Aug. 29 1988-Sept. 1 1988
  • Firstpage
    2
  • Lastpage
    3
  • Abstract
    We report on an extremely low threshold InGaAsP/InP DFB laser realized by an MOCVD/LPE hybrid process.
  • Keywords
    distributed Bragg reflector lasers; distributed feedback lasers; laser modes; semiconductor junction lasers; DFB laser linewidth; III-V semiconductors; InGaAsP-InP laser diodes; MOCVD; NQW DFB lasers; corrugated p-type substrate; crescent-shaped active layer; distributed Bragg reflector lasers; distributed feedback lasers; focused ion beam implanted dopants; low threshold lasers; nanosecond wavelength selection; nondynamic plasma grating; spatial hole burning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1988. Conference Digest., 11th IEEE International
  • Conference_Location
    Boston, MA, USA
  • Type

    conf

  • DOI
    10.1109/SLCON.1988.26133
  • Filename
    26133
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3470529