Title :
Extremely low threshold InGaSsp/InP DFB PPIBH laser diode
Author :
Ohkura, Y. ; Takemoto, Ayumi ; Yoshida, Norihiro ; Isshiki, Kenji ; Kakimoto, Shinji ; Namizaki, H. ; Susaki, W.
fDate :
Aug. 29 1988-Sept. 1 1988
Abstract :
We report on an extremely low threshold InGaAsP/InP DFB laser realized by an MOCVD/LPE hybrid process.
Keywords :
distributed Bragg reflector lasers; distributed feedback lasers; laser modes; semiconductor junction lasers; DFB laser linewidth; III-V semiconductors; InGaAsP-InP laser diodes; MOCVD; NQW DFB lasers; corrugated p-type substrate; crescent-shaped active layer; distributed Bragg reflector lasers; distributed feedback lasers; focused ion beam implanted dopants; low threshold lasers; nanosecond wavelength selection; nondynamic plasma grating; spatial hole burning;
Conference_Titel :
Semiconductor Laser Conference, 1988. Conference Digest., 11th IEEE International
Conference_Location :
Boston, MA, USA
DOI :
10.1109/SLCON.1988.26133
