DocumentCode
3470621
Title
Development of cylinderical cavity type microwave plasma CVD reactor for diamond films deposition
Author
Su, Jianhui ; Li, Yuhua ; Liu, Yanbing ; Ding, Maosheng ; Tang, Wei
Author_Institution
Coll. of Mater. Sci. & Eng., Univ. of Sci. & Technol. Beijing, Beijing, China
fYear
2013
fDate
16-21 June 2013
Firstpage
1
Lastpage
6
Abstract
While microwave plasma chemical vapor deposition (MPCVD) remains the first choice to prepare high quality diamond films, low deposition rate remains the primary concern of the technique. Up until now, there has been a continuous search for new and more efficient high power MPCVD reactors. In this paper, a new cylindrical cavity type MPCVD reactor operated primarily on TM021 resonant mode will be described, and a phenomenological method is used to simulate the distribution of both microwave electric field and hydrogen plasma in the reactor. Experimental results demonstrate that with the newly built MPCVD reactor, a high input microwave power level could be used, and high quality diamond films could be deposited.
Keywords
diamond; elemental semiconductors; plasma CVD; semiconductor growth; semiconductor thin films; thin films; MPCVD reactor; TM021 resonant mode; cylinderical cavity type microwave plasma CVD reactor; diamond films deposition; hydrogen plasma distribution; microwave electric field distribution; microwave plasma chemical vapor deposition; microwave power level; Cavity resonators; Diamonds; Electric fields; Films; Inductors; Microwave theory and techniques; Plasmas;
fLanguage
English
Publisher
ieee
Conference_Titel
Pulsed Power Conference (PPC), 2013 19th IEEE
Conference_Location
San Francisco, CA
ISSN
2158-4915
Type
conf
DOI
10.1109/PPC.2013.6627686
Filename
6627686
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