• DocumentCode
    3470621
  • Title

    Development of cylinderical cavity type microwave plasma CVD reactor for diamond films deposition

  • Author

    Su, Jianhui ; Li, Yuhua ; Liu, Yanbing ; Ding, Maosheng ; Tang, Wei

  • Author_Institution
    Coll. of Mater. Sci. & Eng., Univ. of Sci. & Technol. Beijing, Beijing, China
  • fYear
    2013
  • fDate
    16-21 June 2013
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    While microwave plasma chemical vapor deposition (MPCVD) remains the first choice to prepare high quality diamond films, low deposition rate remains the primary concern of the technique. Up until now, there has been a continuous search for new and more efficient high power MPCVD reactors. In this paper, a new cylindrical cavity type MPCVD reactor operated primarily on TM021 resonant mode will be described, and a phenomenological method is used to simulate the distribution of both microwave electric field and hydrogen plasma in the reactor. Experimental results demonstrate that with the newly built MPCVD reactor, a high input microwave power level could be used, and high quality diamond films could be deposited.
  • Keywords
    diamond; elemental semiconductors; plasma CVD; semiconductor growth; semiconductor thin films; thin films; MPCVD reactor; TM021 resonant mode; cylinderical cavity type microwave plasma CVD reactor; diamond films deposition; hydrogen plasma distribution; microwave electric field distribution; microwave plasma chemical vapor deposition; microwave power level; Cavity resonators; Diamonds; Electric fields; Films; Inductors; Microwave theory and techniques; Plasmas;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Pulsed Power Conference (PPC), 2013 19th IEEE
  • Conference_Location
    San Francisco, CA
  • ISSN
    2158-4915
  • Type

    conf

  • DOI
    10.1109/PPC.2013.6627686
  • Filename
    6627686