Title :
RF Design Challenges at 90nm RFCMOS Technology Under Low Voltage Applications
Author :
Wang, Dawn ; Ou, Jack ; Wang, Xudong
Author_Institution :
Syst. & Technol. Group, IBM, Westford, MA
Abstract :
This paper presents an overview of the RF design challenges in 90nm RFCMOS technology for low voltage applications. It will first cover the state of the art 90nm RFCMOS technology offerings of advanced active and passive devices. The design challenges of key RF circuit blocks such as LNA, mixer and VCO will be discussed in details, with the emphasis on the performance impact to gain, noise and linearity under low supply voltage. The accurate device modeling for FET devices to account for substrate, oxide stress and parasitic effects are also addressed
Keywords :
CMOS integrated circuits; integrated circuit design; low-power electronics; 90 nm; FET devices; LNA; RF design challenges; RFCMOS technology; VCO; low voltage applications; mixer; oxide stress; parasitic effects; CMOS technology; Circuit noise; Circuit synthesis; FETs; Integrated circuit technology; Low voltage; Performance gain; Radio frequency; Semiconductor device modeling; Voltage-controlled oscillators;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306277
