DocumentCode
3470793
Title
Compact model for RF CMOS differential transformers up to 30 GHz
Author
Jiao, Chao ; Gao, Wei ; Yu, Zhiping
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing
Volume
2
fYear
2005
fDate
24-0 Oct. 2005
Firstpage
1052
Lastpage
1055
Abstract
A compact model is presented for on-chip differential transformers fabricated in RF CMOS technology on lossy substrates. The model is scalable, derived from the designed physical layout and processing technology. It suffices for transformers´ simulation and synthesis. A new method for calculation of self and mutual inductances of differential transformers is provided. EM-simulation is used to verify the new compact model and results show excellent agreement with the proposed model over a large frequency range (up to 30GHz)
Keywords
CMOS integrated circuits; differential transformers; inductance; microwave devices; 30 GHz; RF CMOS differential transformers; mutual inductances; self inductances; CMOS technology; Chaotic communication; Circuit synthesis; Inductance; Inductors; Microelectronics; Radio frequency; Semiconductor device modeling; Shape; Transformers;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC, 2005. ASICON 2005. 6th International Conference On
Conference_Location
Shanghai
Print_ISBN
0-7803-9210-8
Type
conf
DOI
10.1109/ICASIC.2005.1611481
Filename
1611481
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