DocumentCode
3470990
Title
A study on self turn-on phenomenon in fast switching operation of high voltage power MOSFET
Author
Funaki, Tsuyoshi
Author_Institution
Div. of Electr., Electron. & Inf. Eng., Osaka Univ., Suita, Japan
fYear
2013
fDate
11-13 Nov. 2013
Firstpage
1
Lastpage
4
Abstract
This paper analytically discusses the self turn-on phenomenon for SiC power MOSFET with deriving circuit formula and device characterization, and the effect of active Miller clamp circuit. The discussion is evaluated with the experiment.
Keywords
equivalent circuits; power MOSFET; power semiconductor switches; silicon compounds; wide band gap semiconductors; Miller clamp circuit; SiC; SiC power MOSFET; equivalent circuit; fast switching operation; high voltage power MOSFET; self turn-on phenomenon; Clamps; Immune system; Logic gates; MOSFET; Switches; Switching circuits; Voltage fluctuations; gate voltage fluctuation; power MOSFET; self turn-on;
fLanguage
English
Publisher
ieee
Conference_Titel
CPMT Symposium Japan (ICSJ), 2013 IEEE 3rd
Conference_Location
Kyoto
Print_ISBN
978-1-4799-2718-0
Type
conf
DOI
10.1109/ICSJ.2013.6756115
Filename
6756115
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