Title :
A 3.3GHz-Bandwidth RF Broadband LNA with a gain of 29dB
Author :
Kang, Shu-jun ; Liu, Lun-cai ; Yun-xia Ma ; Zhang, Zheng-fan
Author_Institution :
Sichuan Inst. of Solid-States Circuits, CETC, Chongqing
Abstract :
In this paper, the design on an MMIC broadband low-noise amplifier was briefly described in terms of SiGe process technology, circuit structure and parameter optimization, package parasitic effect and external circuit effect. After the LNA was processed, the tested results showed the following. The bandwidth of amplifier was 3.37GHz, the power gain (S21) was 29dB, the reverse isolation (S12) was less than or equal to -39dB, the noise figure (NF) was less than or equal to 2.35dB. When the signal frequency was 1.5GHz, P1dB was 9.2dBm, and OIP3 reached 21.8dBm
Keywords :
Ge-Si alloys; MMIC amplifiers; bipolar MMIC; low noise amplifiers; wideband amplifiers; 2.35 dB; 29 dB; 3.37 GHz; MMIC broadband low-noise amplifier; RF broadband LNA; SiGe; SiGe process technology; circuit structure; external circuit effect; package parasitic effect; parameter optimization; Bandwidth; Circuit testing; Design optimization; Germanium silicon alloys; Isolation technology; Low-noise amplifiers; MMICs; Packaging; Radio frequency; Silicon germanium;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306319
