Two dimensional device simulation and fabrication of mesa SOI vertical dual carrier field effect transistor with effective channel length of 30nm for switching ASIC and SOC

Author

Yang, R. ; Li, G.H. ; Xu, Y.Z. ; Chao, Y.F. ; Tang, Z.M. ; Yang, Y.H. ; Ma, B.K. ; Huang, D.H. ; Xu, P. ; Shen, S.G. ; Lin, C.L. ; Wu, C.L. ; Yan, F.Z. ; Han, D.J. ; Ren, Y.L. ; Yu, L.K. ; Cai, I.M. ; Tian, X.N. ; Ji, Y.Z. ; Du, D.S. ; Huang, C.

Author_Institution

Beijing Normal Univ.

Volume

2

fYear

2005

fDate

24-0 Oct. 2005

Firstpage

1102

Lastpage

1106

Abstract

Device physics and integrated device and circuit simulation of "dual carrier field effect transistor" (DCFET) with effective channel length of 5-30nm had been presented in C. Huang et al. (2004). Two dimensional approximation methods had been used in these studies. Recently, two dimensional exact numerical simulations had been carried out for mesa type SOI switching "vertical dual carrier field effect transistor" (VDCFET). This exact method is presented in this paper briefly. More details are reported in R. Yang (2004). The comparison of the simulation results of the approximate physical method and of the exact numerical method shall be discussed and are shown to be in good agreement. Based on these simulation results, mesa type SOI switching VDCFET with effective channel of 30nm was designed and fabricated by using ion implantation processes. These fabrication processes shall be presented. The measured d.c. characteristics shall be presented and they are in good agreement with the device simulation results

Keywords

approximation theory; circuit simulation; field effect transistor switches; ion implantation; nanoelectronics; system-on-chip; 2D approximation; 2D device simulation; 30 nm; ASIC; SOC; circuit simulation; dc characteristics; device physics simulation; dual carrier field effect transistor; effective channel length; ion implantation; mesa SOI; numerical simulations; switching VDCFET; Application specific integrated circuits; Differential equations; FETs; Fabrication; Ion implantation; Numerical simulation; Physics; Poisson equations; Space charge; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC, 2005. ASICON 2005. 6th International Conference On

Conference_Location

Shanghai

Print_ISBN

0-7803-9210-8

Type

conf

DOI

10.1109/ICASIC.2005.1611500

Filename

1611500