Author :
Yang, R. ; Li, G.H. ; Xu, Y.Z. ; Chao, Y.F. ; Tang, Z.M. ; Yang, Y.H. ; Ma, B.K. ; Huang, D.H. ; Xu, P. ; Shen, S.G. ; Lin, C.L. ; Wu, C.L. ; Yan, F.Z. ; Han, D.J. ; Ren, Y.L. ; Yu, L.K. ; Cai, I.M. ; Tian, X.N. ; Ji, Y.Z. ; Du, D.S. ; Huang, C.
Abstract :
Device physics and integrated device and circuit simulation of "dual carrier field effect transistor" (DCFET) with effective channel length of 5-30nm had been presented in C. Huang et al. (2004). Two dimensional approximation methods had been used in these studies. Recently, two dimensional exact numerical simulations had been carried out for mesa type SOI switching "vertical dual carrier field effect transistor" (VDCFET). This exact method is presented in this paper briefly. More details are reported in R. Yang (2004). The comparison of the simulation results of the approximate physical method and of the exact numerical method shall be discussed and are shown to be in good agreement. Based on these simulation results, mesa type SOI switching VDCFET with effective channel of 30nm was designed and fabricated by using ion implantation processes. These fabrication processes shall be presented. The measured d.c. characteristics shall be presented and they are in good agreement with the device simulation results
Keywords :
approximation theory; circuit simulation; field effect transistor switches; ion implantation; nanoelectronics; system-on-chip; 2D approximation; 2D device simulation; 30 nm; ASIC; SOC; circuit simulation; dc characteristics; device physics simulation; dual carrier field effect transistor; effective channel length; ion implantation; mesa SOI; numerical simulations; switching VDCFET; Application specific integrated circuits; Differential equations; FETs; Fabrication; Ion implantation; Numerical simulation; Physics; Poisson equations; Space charge; Voltage;
