The impact of stochastic dopant and interconnect distributions on gigascale integration

Author

Meindl, J.D. ; De, V.K. ; Wills, D.S. ; Eble, J.C. ; Xinghai Tang ; Davis, J.A. ; Austin, B. ; Bhavnagarwala, A.J.

Author_Institution

Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA

fYear

1997

fDate

8-8 Feb. 1997

Firstpage

232

Lastpage

233

Abstract

Opportunities for GSI are governed by a hierarchy of physical limits whose five levels can be codified as: fundamental, material, device, circuit, and system. This distinctive methodology is extended here by elucidating the impact on GSI of random dopant atom placement in the channel region of a MOSFET and of interconnect distributions in random logic networks in context with projected advances in device and circuit techniques.

Keywords

MOSFET; doping profiles; integrated circuit interconnections; semiconductor doping; stochastic processes; GSI; MOSFET; gigascale integration; random logic network; stochastic dopant distribution; stochastic interconnect distribution; CMOS logic circuits; CMOS technology; Circuit simulation; Doping profiles; Integrated circuit interconnections; Logic circuits; Logic devices; MOSFET circuits; Stochastic processes; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1997. Digest of Technical Papers. 43rd ISSCC., 1997 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-3721-2

Type

conf

DOI

10.1109/ISSCC.1997.585366

Filename

585366