Wafer-level Jramp and J-constant electromigration testing of conventional and SWEAT patterns assisted by a thermal and electrical simulator

For a quick analysis of wafer-level metal electromigration tests, an analytical thermal and electrical simulator was developed for conventional and SWEAT patterns. For the experimental current vs. resistance data, a fitting was made with oxide and metal thermal conductivity as the parameter, and good agreement was obtained between theory and experiment. A theory is created to show that the extrapolated lifetime can be quickly obtained by Jramp stress tests. Reliable values of the activation factor can be obtained by the combined use of several SWEAT patterns in J-constant tests.<>