DocumentCode
3471364
Title
Plasma-induced charge damage and its effect on reliability in 0.115-μm technology
Author
Li, Erhong ; Pachura, David ; Duong, Lesly ; Prasad, Sharad ; Vijay, Dilip
Author_Institution
Characterization & Reliability Div., LSI Logic Corp., Milpitas, CA, USA
fYear
2003
fDate
24-25 April 2003
Firstpage
69
Lastpage
72
Abstract
Plasma-induced damage on 0.115 μm Cu dual damascene technology devices is investigated. The metal-via-metal structure shows more plasma damage than other metal structures. Plasma damage has little impact on NMOSFET hot carrier degradation. For PMOSFET NBTI degradation, the plasma damage on thick oxide is clearly observed.
Keywords
MOSFET; copper; hot carriers; leakage currents; semiconductor device metallisation; semiconductor device reliability; semiconductor device testing; sputter etching; surface charging; 0.115 micron; Cu; Cu dual damascene technology devices; NMOSFET hot carrier degradation; PMOSFET NBTI degradation; dual-gate oxide technology; gate leakage current; metal-via-metal structure; plasma-induced charge damage; reliability; thick oxide; Condition monitoring; Fuses; Leakage current; MOSFET circuits; Plasma devices; Plasma temperature; Stress; Tail; Testing; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma- and Process-Induced Damage, 2003 8th International Symposium
Print_ISBN
0-7803-7747-8
Type
conf
DOI
10.1109/PPID.2003.1200917
Filename
1200917
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