DocumentCode
3471543
Title
A fast plasma induced damage monitoring method
Author
Yang, Ming ; Ambrose, Tom
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
fYear
2003
fDate
24-25 April 2003
Firstpage
104
Lastpage
107
Abstract
We have developed a new and Fast Feedback Plasma Monitoring Technique (FPMT) to monitor and evaluate the plasma reactor and processes. The FPMT technique measures the slope of flat-band voltage (Vfb) versus oxide thickness of an oxide wafer, and gives reliable results. We discuss the new technique and report some experimental results on plasma charging damage characterization for different commercial available plasma reactors. Furthermore, we discuss the correlation results between full flow Predator data and FPMT data.
Keywords
integrated circuit manufacture; process monitoring; sputter etching; surface charging; fast feedback plasma monitoring technique; fast plasma induced damage monitoring method; flat-band voltage slope; full flow Predator data; integrated circuit fabrication; oxide thickness; oxide wafer; plasma charging damage characterization; plasma etching tool; plasma processing; plasma reactor; Inductors; Monitoring; Plasma applications; Plasma devices; Plasma materials processing; Plasma measurements; Plasma properties; Plasma temperature; Surface charging; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma- and Process-Induced Damage, 2003 8th International Symposium
Print_ISBN
0-7803-7747-8
Type
conf
DOI
10.1109/PPID.2003.1200933
Filename
1200933
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