DocumentCode :
3471601
Title :
Initial gate leakage in ultra thin SiO2 - the role of a brief stress
Author :
Cheung, Kin P.
Author_Institution :
Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
fYear :
2003
fDate :
24-25 April 2003
Firstpage :
122
Lastpage :
125
Abstract :
For ultra thin oxide, the preferred plasma charging damage detection method has been narrowed down to initial gate leakage. The initial gate leakage measurement can in principle distinguish stress-induced-leakage-current (SILC) from soft breakdown if the test device is small. In a previous report, we showed that the expected sharp distinction between broken devices and non-broken devices does not exist when several devices are measured for very thin oxide. Here, the explanation for the lack of sharp distinction between broken and non-broken devices is provided with the support of new data. It is clear that there is a basic difference between plasma charging stress and bench-top electrical stress of ultra thin oxide. The results indicate that, to obtain a better measure of plasma charging damage using gate leakage, a brief stress is necessary.
Keywords :
MOSFET; dielectric thin films; leakage currents; semiconductor device breakdown; semiconductor device testing; silicon compounds; sputter etching; surface charging; CMOS technology; SILC; SiO2; bench-top electrical stress; brief stress; broken devices; initial gate leakage; nMOS devices; nonbroken devices; pMOS devices; plasma charging damage detection method; soft breakdown; stress-induced leakage current; ultra thin SiO2; ultra thin oxide; Electric breakdown; Flash memory; Gate leakage; Leak detection; Leakage current; Statistical distributions; Stress measurement; Thickness measurement; Tunneling; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma- and Process-Induced Damage, 2003 8th International Symposium
Print_ISBN :
0-7803-7747-8
Type :
conf
DOI :
10.1109/PPID.2003.1200938
Filename :
1200938
Link To Document :
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