DocumentCode
3471767
Title
Two solutions that achieve high-power (>200mW) diffraction-limited-beam, array operation: 1) Out-of-phase coupled positive index guides, and 2) Closely spaced antiguides
Author
Botez, D. ; Maws, L. ; Roth, T.J. ; Hayashida, P. ; Peterson, Garrett
fYear
1988
fDate
Aug. 29 1988-Sept. 1 1988
Firstpage
18
Lastpage
19
Abstract
Progress in diffraction-limited arrays has been slow. The fundamental-mode beam of evanescently-coupled devices invariably broadens at powers >40 mW, because of the gain spatial hole burning (SHB). Y-junction coupled devices, while immune to gain SHB, have beams 3.5-4 times the diffraction limit due to weak coupling. Here we present two solutions for high-power, diffraction-limited operation: 1) devices operating in array modes stable against gain SHB: and 2) devices immune to game SHB, yet strongly coupled.
Keywords
semiconductor junction lasers; III-V semiconductors; InGaAsP-InP; buried heterostructure lasers; coherent arrays; diffraction-coupled-output lasers; high-power diffraction-limited-beam array operation; laser diodes; laser spatial model structure; phase locked arrays; phase-locked Y coupled index-guided laser arrays; power scaling;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1988. Conference Digest., 11th IEEE International
Conference_Location
Boston, MA, USA
Type
conf
DOI
10.1109/SLCON.1988.26140
Filename
26140
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