• DocumentCode
    3471767
  • Title

    Two solutions that achieve high-power (>200mW) diffraction-limited-beam, array operation: 1) Out-of-phase coupled positive index guides, and 2) Closely spaced antiguides

  • Author

    Botez, D. ; Maws, L. ; Roth, T.J. ; Hayashida, P. ; Peterson, Garrett

  • fYear
    1988
  • fDate
    Aug. 29 1988-Sept. 1 1988
  • Firstpage
    18
  • Lastpage
    19
  • Abstract
    Progress in diffraction-limited arrays has been slow. The fundamental-mode beam of evanescently-coupled devices invariably broadens at powers >40 mW, because of the gain spatial hole burning (SHB). Y-junction coupled devices, while immune to gain SHB, have beams 3.5-4 times the diffraction limit due to weak coupling. Here we present two solutions for high-power, diffraction-limited operation: 1) devices operating in array modes stable against gain SHB: and 2) devices immune to game SHB, yet strongly coupled.
  • Keywords
    semiconductor junction lasers; III-V semiconductors; InGaAsP-InP; buried heterostructure lasers; coherent arrays; diffraction-coupled-output lasers; high-power diffraction-limited-beam array operation; laser diodes; laser spatial model structure; phase locked arrays; phase-locked Y coupled index-guided laser arrays; power scaling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1988. Conference Digest., 11th IEEE International
  • Conference_Location
    Boston, MA, USA
  • Type

    conf

  • DOI
    10.1109/SLCON.1988.26140
  • Filename
    26140