DocumentCode
3471821
Title
Recent trends in 300-mm plasma equipment
Author
Vinogradov, Georgy K.
Author_Institution
FOI Corp., Kawasaki, Japan
fYear
2003
fDate
24-25 April 2003
Firstpage
168
Lastpage
173
Abstract
The main development trends of 300-mm plasma equipment, particularly etchers, are further increasing competition between capacitive and inductive plasma sources. Capacitive plasma sources increase excitation frequency in order to attain low-pressure high-density plasma conditions, while inductive sources essentially shrink the discharge gap and cover the low gas residence time range previously occupied exclusively by their capacitive counterparts. Both systems seem to be converging at the very limit for advanced oxide etchers. Wide-gap inductive sources are successfully replacing capacitive systems in polysilicon and metal etch. Microwave systems are still in the minority and will fail to occupy a noticeable place in the 300-mm market in the near future.
Keywords
integrated circuit manufacture; plasma sources; sputter etching; 300 mm; 300-mm plasma equipment; capacitive plasma sources; development trends; discharge gap; excitation frequency; gas residence time; inductive plasma sources; low-pressure high-density plasma conditions; metal etch; microwave systems; plasma etchers; polysilicon etch; wide-gap inductive sources; Chemical technology; Electronic equipment manufacture; Etching; Manufacturing processes; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma sources; Research and development; Semiconductor device manufacture;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma- and Process-Induced Damage, 2003 8th International Symposium
Print_ISBN
0-7803-7747-8
Type
conf
DOI
10.1109/PPID.2003.1200949
Filename
1200949
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