• DocumentCode
    3471821
  • Title

    Recent trends in 300-mm plasma equipment

  • Author

    Vinogradov, Georgy K.

  • Author_Institution
    FOI Corp., Kawasaki, Japan
  • fYear
    2003
  • fDate
    24-25 April 2003
  • Firstpage
    168
  • Lastpage
    173
  • Abstract
    The main development trends of 300-mm plasma equipment, particularly etchers, are further increasing competition between capacitive and inductive plasma sources. Capacitive plasma sources increase excitation frequency in order to attain low-pressure high-density plasma conditions, while inductive sources essentially shrink the discharge gap and cover the low gas residence time range previously occupied exclusively by their capacitive counterparts. Both systems seem to be converging at the very limit for advanced oxide etchers. Wide-gap inductive sources are successfully replacing capacitive systems in polysilicon and metal etch. Microwave systems are still in the minority and will fail to occupy a noticeable place in the 300-mm market in the near future.
  • Keywords
    integrated circuit manufacture; plasma sources; sputter etching; 300 mm; 300-mm plasma equipment; capacitive plasma sources; development trends; discharge gap; excitation frequency; gas residence time; inductive plasma sources; low-pressure high-density plasma conditions; metal etch; microwave systems; plasma etchers; polysilicon etch; wide-gap inductive sources; Chemical technology; Electronic equipment manufacture; Etching; Manufacturing processes; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma sources; Research and development; Semiconductor device manufacture;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma- and Process-Induced Damage, 2003 8th International Symposium
  • Print_ISBN
    0-7803-7747-8
  • Type

    conf

  • DOI
    10.1109/PPID.2003.1200949
  • Filename
    1200949