Title :
A GaAs HBT Power Amplifier with a Newly Active Bias Linearizer for W-CDMA Terminals
Author :
Wen, Jin-Cai ; Sun, Ling-Ling
Author_Institution :
Microelectron. CAD Center, Hangzhou Dianzi Univ.
Abstract :
In this paper, a newly active bias linearizer is introduced based on GaAs HBT technology. The proposed linearizer composed of active bias circuit and a reverse-biased diode maintains the fixed base voltage of power stage HBTs, effectively improves the gain compression, and more importantly, it consumes no additional die area and DC power. A two-stage power amplifier for wide-band code division multiple access (W-CDMA) application was designed to verify the novel technique. At an output power of 28 dBm, the linearizer improves input 1dB compression power by 6 dB and phase distortion by 17.8deg, respectively. Accordingly, the adjacent channel power ratio (ACPR) is also improved
Keywords :
III-V semiconductors; code division multiple access; gallium arsenide; heterojunction bipolar transistors; power amplifiers; power bipolar transistors; telecommunication terminals; GaAs; GaAs HBT power amplifier; GaAs HBT technology; W-CDMA terminals; active bias circuit; active bias linearizer; adjacent channel power ratio; gain compression; reverse-biased diode; wideband code division multiple access; Broadband amplifiers; Circuits; Diodes; Gallium arsenide; Heterojunction bipolar transistors; Multiaccess communication; Phase distortion; Power amplifiers; Power generation; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
1-4244-0160-7
Electronic_ISBN :
1-4244-0161-5
DOI :
10.1109/ICSICT.2006.306407
