A High Precision CMOS Current-mode Band-gap Voltage Reference

Author

Yu Guoyi ; Zou Xuecheng

Author_Institution

Dept. of Electron. Sci. & Technol., Huazhong Univ. of Sci. & Technol., Wuhan

fYear

2006

fDate

23-26 Oct. 2006

Firstpage

1736

Lastpage

1738

Abstract

A new high precision CMOS current-mode band-gap voltage reference which takes advantage of the high-order curvature-compensated technique and the enhancement pre-regulator technique is proposed. Based on the 1 ^st 0.35mum standard mixed-signal CMOS process technology, the circuit achieves a much low temperature coefficient of 3.68ppm/degC over the temperature range of -40 degC to +150degC with 1.00V output reference voltage and a high PSRR over a broad frequency range. The PSRR is -125.4dB at 100Hz and remains -59.2dB at 100MHz. Using push-pull output stage instead of the bias circuits, the power dissipation is only about 50muW

Keywords

CMOS integrated circuits; current-mode circuits; mixed analogue-digital integrated circuits; reference circuits; voltage regulators; -40 to 150 C; 0.35 micron; 1.00 V; CMOS current-mode band-gap voltage reference; enhancement preregulator technique; high-order curvature-compensated technique; mixed-signal CMOS process technology; power dissipation; push-pull output stage; CMOS technology; Circuit stability; Frequency; Low voltage; Negative feedback loops; Photonic band gap; Power dissipation; Regulators; Resistors; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on

Conference_Location

Shanghai

Print_ISBN

1-4244-0160-7

Electronic_ISBN

1-4244-0161-5

Type

conf

DOI

10.1109/ICSICT.2006.306410

Filename

4098527