DocumentCode
3472205
Title
PRAM-a power ramping controller for TDMA systems in digital mobile telecom applications
Author
Becker, R. ; Neukom, S. ; Birth, W.
Author_Institution
Philips Semiconductors, Zurich, Switzerland
fYear
1997
fDate
8-8 Feb. 1997
Firstpage
370
Lastpage
371
Abstract
Modern digital cellular or cordless telephone standards like GSM or DECT share frequency bands among several users by time division multiple access (TDMA). This approach necessitates the power amplifier being rapidly ramped up and down for transmit bursts. To balance the trade-off between quick turn-on and turnoff and spurious spectral emissions, the recommendations define strict templates into which the output power must fit. This integrated circuit is fabricated in a standard CMOS technology with self-aligned contacts for all control functions for RF power amplifiers in bipolar or GaAs technology for the GSM, DCS1800 or PCN1900 standards. The device may be used as a stand alone component but can also be included on a VLSI as a library block.
Keywords
CMOS analogue integrated circuits; CMOS integrated circuits; UHF power amplifiers; VLSI; cellular radio; cordless telephone systems; digital radio; power amplifiers; time division multiple access; CMOS technology; DECT; GSM; PRAM; RF power amplifiers; TDMA systems; VLSI; cellular telephones; cordless telephone; digital mobile telecom applications; power ramping controller; self-aligned contacts; standards; time division multiple access; transmit bursts; Bipolar integrated circuits; CMOS technology; Control systems; Frequency conversion; GSM; Integrated circuit technology; Power amplifiers; Power generation; Telephony; Time division multiple access;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1997. Digest of Technical Papers. 43rd ISSCC., 1997 IEEE International
Conference_Location
San Francisco, CA, USA
ISSN
0193-6530
Print_ISBN
0-7803-3721-2
Type
conf
DOI
10.1109/ISSCC.1997.585435
Filename
585435
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