DocumentCode
3472769
Title
Digital Circuits Using SOI Four-Gate Transistor
Author
Akarvardar, K. ; Blalock, B. ; Chen, S. ; Cristoloveanu, S. ; Gentil, P. ; Mojarradi, M.M.
Author_Institution
IMEP, Grenoble
fYear
2006
fDate
23-26 Oct. 2006
Firstpage
1867
Lastpage
1869
Abstract
Novel G4-FET based logic-circuits (adjustable-threshold inverter, real-time reconfigurable logic gates and DRAM cell) are experimentally demonstrated. The independent action of the four gates helps minimize the required transistor count per logic function while enhancing design flexibility
Keywords
DRAM chips; field effect transistors; logic circuits; logic gates; silicon-on-insulator; DRAM cell; G4 FET; SOI; adjustable threshold inverter; design flexibility; digital circuits; four gate transistor; logic circuits; logic function; real time reconfigurable logic gates; Digital circuits; Fabrication; Inverters; Logic circuits; Logic functions; MOSFET circuits; Random access memory; Reconfigurable logic; Silicon; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
Conference_Location
Shanghai
Print_ISBN
1-4244-0160-7
Electronic_ISBN
1-4244-0161-5
Type
conf
DOI
10.1109/ICSICT.2006.306491
Filename
4098565
Link To Document