Title :
Implementation of digital circuits in an InP scaled HBT technology
Author :
Randall, B.A. ; Schwab, D.J. ; Walters, W.L. ; Nielsen, A.D. ; Amundsen, E.L.H. ; Sokolich, M.M. ; Brown, Y.K. ; Lui, M.M. ; Henige, J.A. ; Gilbert, B.K.
Author_Institution :
Special Purpose Processor Dev. Group, Mayo Found., Rochester, MN, USA
Abstract :
The Mayo Foundation Special Purpose Processor Development Group (Mayo) and HRL Laboratories (HRL) are developing circuits for implementation in an indium phosphide (InP) scaled heterojunction bipolar transistor (HBT) technology which has the potential for very high performance analog and digital operation. Preliminary results from HRL show that the f/sub T/ of the devices can be improved from 90 GHz for the HRL InP standard (2 micron emitter) HBT technology to approximately 180 GHz for this scaled (1 micron emitter) HBT technology. Mayo has designed several digital circuits in this scaled technology, the initial test results for which are reported in this paper.
Keywords :
III-V semiconductors; bipolar digital integrated circuits; digital communication; heterojunction bipolar transistors; indium compounds; integrated circuit testing; 1 micron; 180 GHz; HRL Laboratories; InP; Mayo Foundation; decimator circuit; digital receivers; initial test results; scaled HBT technology; Circuit synthesis; Circuit testing; Clocks; Digital circuits; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit technology; Laboratories;
Conference_Titel :
GaAs IC Symposium, 1999. 21st Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-5585-7
DOI :
10.1109/GAAS.1999.803753
