• DocumentCode
    3473128
  • Title

    Radiation Hardened 128K PDSOI CMOS Static RAM

  • Author

    Kai, Zhao ; Zhongli, Liu ; Fang, Yu ; Zhiqiang, Xiao ; Genshen, Hong

  • Author_Institution
    Inst. of Semicond., CAS, Beijing
  • fYear
    2006
  • fDate
    2006
  • Firstpage
    1922
  • Lastpage
    1924
  • Abstract
    A fast 128K-bit asynchronous SRAM with access time of 25 ns is presented. It used a radiation hardened 0.8-micron CMOS/SOI process with 3 layers of metal. It features 500 muA stand-by current, 20mA@10MHz operating current, 500K rad(Si) total dose tolerant and 2.45times10 11rad (Si)/s dose rate survivability. The circuit operates with ambient temperature from -25 to +125degC and power supply from 4.5 to 5.5V. A 28-pin dual-in-line flat pack package is used
  • Keywords
    CMOS memory circuits; SRAM chips; electronics packaging; radiation hardening (electronics); silicon-on-insulator; -25 to 125 C; 0.8 micron; 10 MHz; 128000 bit; 20 mA; 200 muA; 25 ns; 4.5 to 5.5 V; CMOS static RAM; dose rate survivability; dual-in-line flat pack package; radiation hardening; silicon-on-insulator; CMOS technology; Circuit simulation; Decoding; Energy consumption; Radiation hardening; Random access memory; Read-write memory; Silicon on insulator technology; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-0160-7
  • Electronic_ISBN
    1-4244-0161-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.2006.306507
  • Filename
    4098581
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3473128