DocumentCode
34739
Title
A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High- 
Gate-Stacks
Author
Vandelli, Luca ; Larcher, Luca ; Veksler, Dekel ; Padovani, A. ; Bersuker, Gennadi ; Matthews, K.
Author_Institution
Dipt. di Sci. e Metodi dell´Ing., Univ. di Modena e Reggio Emilia, Reggio Emilia, Italy
Volume
61
Issue
7
fYear
2014
fDate
Jul-14
Firstpage
2287
Lastpage
2293
Abstract
We propose a physical model for the fast component (<;1 s) of the positive bias temperature instability (PBTI) process in SiOx/HfO2 gate-stacks. The model is based on the electron- phonon interaction governing the trapping/emission of injected electrons at the preexisting defects in the dielectric stack. The model successfully reproduces the experimental time dependences of the VTH shift on both stress voltage and temperature. Simulations allow the extraction of the physical characteristics of the defects contributing to PBTI, which are found to match those assisting the leakage current in these stacks (i.e., oxygen vacancies).
Keywords
electron emission; electron traps; electron-phonon interactions; hafnium compounds; leakage currents; silicon compounds; SiOx-HfO2; charge-trapping model; electron emission; electron trapping; electron-phonon interaction; high-κ gate-stacks; leakage current; positive bias temperature instability; Electron traps; Hafnium compounds; Logic gates; Stress; Transient analysis; Voltage measurement; Charge trapping; device modeling; high-κ dielectric; high-?? dielectric; positive bias temperature instability (PBTI); positive bias temperature instability (PBTI).;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2014.2323085
Filename
6824842
Link To Document