DocumentCode
3474292
Title
Single-wafer processing: opportunities and challenges
Author
Doering, Robert R.
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
fYear
1995
fDate
2-4 Oct 1995
Firstpage
480
Lastpage
481
Abstract
As we approach the 0.25-μm technology node and 300-mm wafer manufacturing, the industry is challenged to develop new thermal processing tools to replace traditional large-batch furnaces. The most technically challenging process for practical single-wafer implementation is thick oxidation (e.g., for device isolation). In general, the tradeoff between process uniformity, yield and throughput, for each thermal process, will be reflected in the single-wafer vs. minibatch configuration of these tools. The last bastion of large batch processing will probably be wet immersion cleanups, which are less sensitive to the “device- and wafer-scaling pressures”. However, the migration of thermal processing away from large batches will exert “logistical pressure” on the associated cleanups to follow suit. Additional motivations for single-wafer processing are discussed
Keywords
batch processing (industrial); integrated circuit technology; integrated circuit yield; isolation technology; oxidation; 0.25 micron; 300 mm; device isolation; minibatch configuration; oxidation; process uniformity; single-wafer processing; thermal processing tools; throughput; wafer manufacturing; yield; Furnaces; Instruments; Integrated circuit technology; Isolation technology; Manufacturing industries; Manufacturing processes; Oxidation; Process control; Production facilities; Semiconductor device manufacture; Semiconductor devices; Throughput;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Manufacturing Technology Symposium, 1995. 'Manufacturing Technologies - Present and Future', Seventeenth IEEE/CPMT International
Conference_Location
Austin, TX
Print_ISBN
0-7803-2996-1
Type
conf
DOI
10.1109/IEMT.1995.526206
Filename
526206
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