Title :
MOSFET modeling for RF-CMOS design
Author :
Miura-Mattausch, Mitiko
Author_Institution :
Adv. Sci. of Matter, Hiroshima Univ., Japan
Abstract :
Requirement for an accurate RF-MOSFET model is increasing as the trend to higher operation speed continues. We address observed phenomena obstructing circuit performance in the RF operating regime. The origin of the phenomena as well as their modeling will be discussed.
Keywords :
CMOS integrated circuits; MOSFET circuits; logic design; radiofrequency integrated circuits; MOSFET modelling; RF operating regime; RF-CMOS design; circuit performance; Circuit optimization; Circuit simulation; Delay; Electronic mail; Equivalent circuits; MOSFET circuits; Parameter extraction; Physics; Radio frequency; Voltage;
Conference_Titel :
Design Automation Conference, 2004. Proceedings of the ASP-DAC 2004. Asia and South Pacific
Print_ISBN :
0-7803-8175-0
DOI :
10.1109/ASPDAC.2004.1337624
