DocumentCode :
3474582
Title :
MOSFET modeling for RF-CMOS design
Author :
Miura-Mattausch, Mitiko
Author_Institution :
Adv. Sci. of Matter, Hiroshima Univ., Japan
fYear :
2004
fDate :
27-30 Jan. 2004
Firstpage :
482
Lastpage :
490
Abstract :
Requirement for an accurate RF-MOSFET model is increasing as the trend to higher operation speed continues. We address observed phenomena obstructing circuit performance in the RF operating regime. The origin of the phenomena as well as their modeling will be discussed.
Keywords :
CMOS integrated circuits; MOSFET circuits; logic design; radiofrequency integrated circuits; MOSFET modelling; RF operating regime; RF-CMOS design; circuit performance; Circuit optimization; Circuit simulation; Delay; Electronic mail; Equivalent circuits; MOSFET circuits; Parameter extraction; Physics; Radio frequency; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design Automation Conference, 2004. Proceedings of the ASP-DAC 2004. Asia and South Pacific
Print_ISBN :
0-7803-8175-0
Type :
conf
DOI :
10.1109/ASPDAC.2004.1337624
Filename :
1337624
Link To Document :
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