Title :
2DEG transport in gate recessed AlGaN/(InGaN)/GaN HEMT
Author :
Lenka, T.R. ; Dash, G.N. ; Panda, Anup Kumar
Author_Institution :
Dept. of Electron. & Commun. Eng., Nat. Inst. of Technol., Silchar, India
Abstract :
A new HEMT structure is proposed by introducing a low band gap InGaN layer at the heterointerface of an AlGaN/GaN structure. The characteristics of the 2-Dimensional Electron Gas (2DEG) confined in the proposed structure are explored through self-consistent solution of Schrödinger and Poisson´s equations. The results show that there is a remarkable improvement in the electron density leading to better mobility of the device.
Keywords :
III-V semiconductors; Poisson equation; Schrodinger equation; aluminium compounds; electron density; gallium compounds; high electron mobility transistors; indium compounds; two-dimensional electron gas; wide band gap semiconductors; 2-dimensional electron gas; 2DEG transport; AlGaN-InGaN-GaN; Poisson equations; Schrodinger equations; device mobility; electron density; gate recessed HEMT; heterointerface; low band gap InGaN layer; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Passivation; Photonic band gap; Substrates; 2DEG; HEMT; InGaN;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628042
