• DocumentCode
    3474723
  • Title

    2DEG transport in gate recessed AlGaN/(InGaN)/GaN HEMT

  • Author

    Lenka, T.R. ; Dash, G.N. ; Panda, Anup Kumar

  • Author_Institution
    Dept. of Electron. & Commun. Eng., Nat. Inst. of Technol., Silchar, India
  • fYear
    2013
  • fDate
    3-5 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A new HEMT structure is proposed by introducing a low band gap InGaN layer at the heterointerface of an AlGaN/GaN structure. The characteristics of the 2-Dimensional Electron Gas (2DEG) confined in the proposed structure are explored through self-consistent solution of Schrödinger and Poisson´s equations. The results show that there is a remarkable improvement in the electron density leading to better mobility of the device.
  • Keywords
    III-V semiconductors; Poisson equation; Schrodinger equation; aluminium compounds; electron density; gallium compounds; high electron mobility transistors; indium compounds; two-dimensional electron gas; wide band gap semiconductors; 2-dimensional electron gas; 2DEG transport; AlGaN-InGaN-GaN; Poisson equations; Schrodinger equations; device mobility; electron density; gate recessed HEMT; heterointerface; low band gap InGaN layer; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Passivation; Photonic band gap; Substrates; 2DEG; HEMT; InGaN;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
  • Conference_Location
    Hong Kong
  • Type

    conf

  • DOI
    10.1109/EDSSC.2013.6628042
  • Filename
    6628042
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3474723