DocumentCode
3474740
Title
Effect of bias dependence of substrate NPN transistor on total dose irradiation
Author
Ting Zhang ; Yuan Liu ; Bin Li ; Yun-fei En ; Yu-Juan He
Author_Institution
South China Univ. of Technol., Guangzhou, China
fYear
2013
fDate
3-5 June 2013
Firstpage
1
Lastpage
2
Abstract
In this paper, effect of bias dependence of substrate NPN (SNPN) transistors on total dose radiation is investigated. By considering of bulk field and fringing electric field in the oxide, the degradation mechanisms are discussed in numerical simulations. Experimental results show that the applied emitter voltage and the emitter-base junction bias play important roles in the total dose irradiation effect of SNPN transistors, which is agreement with the theoretical analysis.
Keywords
bipolar transistors; numerical analysis; radiation hardening (electronics); SNPN transistors; bias dependence; bulk field; degradation mechanism; emitter voltage; emitter-base junction bias; fringing electric field; numerical simulation; substrate NPN transistor; theoretical analysis; total dose irradiation effect; Silicon; SNPN transistor; bias; bulk field; fringing field; total dose;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location
Hong Kong
Type
conf
DOI
10.1109/EDSSC.2013.6628043
Filename
6628043
Link To Document