Title :
Effect of bias dependence of substrate NPN transistor on total dose irradiation
Author :
Ting Zhang ; Yuan Liu ; Bin Li ; Yun-fei En ; Yu-Juan He
Author_Institution :
South China Univ. of Technol., Guangzhou, China
Abstract :
In this paper, effect of bias dependence of substrate NPN (SNPN) transistors on total dose radiation is investigated. By considering of bulk field and fringing electric field in the oxide, the degradation mechanisms are discussed in numerical simulations. Experimental results show that the applied emitter voltage and the emitter-base junction bias play important roles in the total dose irradiation effect of SNPN transistors, which is agreement with the theoretical analysis.
Keywords :
bipolar transistors; numerical analysis; radiation hardening (electronics); SNPN transistors; bias dependence; bulk field; degradation mechanism; emitter voltage; emitter-base junction bias; fringing electric field; numerical simulation; substrate NPN transistor; theoretical analysis; total dose irradiation effect; Silicon; SNPN transistor; bias; bulk field; fringing field; total dose;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628043
