A 1-W, 800-MHz, switch-mode CMOS RF power amplifier using an on-chip transformer with double primary sides

Author

Shim, Sunbo ; Hong, Songcheol

Author_Institution

Sch. of EECS, Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon

fYear

2009

fDate

18-22 Jan. 2009

Firstpage

538

Lastpage

541

Abstract

A fully-integrated switch-mode CMOS RF power amplifier is implemented in 0.18-mum process based on the concept of the distributed active transformer. In order to enhance the output power level by increasing the coupling factor of the transformer, the double primary parts are placed at both sides of the secondary part of the transformer, thereby reducing the effective resistance of the transmission-line. The designed power amplifier has more than 30-dBm of output power in GSM 850 band.

Keywords

CMOS integrated circuits; high-frequency transmission lines; impedance convertors; microwave power amplifiers; GSM 850 band; distributed active transformer; double primary sides; frequency 800 MHz; on-chip transformer; power 1 W; size 0.18 mum; switch-mode CMOS RF power amplifier; transmission line; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Switch-mode CMOS power amplifier; distributed active transformer (DAT); global system for mobile telecommunication (GSM);

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Symposium, 2009. RWS '09. IEEE

Conference_Location

San Diego, CA

Print_ISBN

978-1-4244-2698-0

Electronic_ISBN

978-1-4244-2699-7

Type

conf

DOI

10.1109/RWS.2009.4957407

Filename

4957407