30 GHz 2-stage MMIC low noise amplifier using GaAs pseudomorphic HEMT

Author

Rasmi, Amiza ; Azmi, I.M. ; Rahim, Ahmad Ismat Abdul ; Heng-Tung Hsu ; Chang, Edward Yi

Author_Institution

TM R&D Sdn Bhd, Lingkaran Teknokrat Timur, Cyberjaya, Malaysia

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

1

Abstract

Summary form only given. This paper presents the design and simulated performance of millimeter-wave monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA). A two stage LNA has been designed and developed using a 0.15um commercial GaAs pseudomorphic HEMT technology. The simulated data shows 2.21dB of noise figure with an associated gain of 13.14dB at the frequency operation of 30 GHz. At 3.0V of drain voltage, V_DS and -0.20V of gate voltage, V_GS; this LNA consume 56mA of total current and achieves 16.10dBm of output P1dB. The layout size is 4.1 × 1.3 mm².

Keywords

MMIC amplifiers; gallium arsenide; low noise amplifiers; wide band gap semiconductors; 2-stage MMIC low noise amplifier; current 56 mA; data simulation; drain voltage; frequency 30 GHz; gate voltage; millimeter-wave monolithic microwave integrated circuit low noise amplifier; pseudomorphic HEMT technology; voltage -0.20 V; voltage 3 V; Educational institutions; Gallium arsenide; Low-noise amplifiers; MMICs; PHEMTs; Technological innovation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628044

Filename

6628044