Title :
A W-band two-stage cascode amplifier with small-signal gain of 25.7 dB
Author :
Ying-Hui Zhong ; Yu-Ming Zhang ; Yi-Men Zhang ; Hong-Fei Yao ; Yu-Xiong Cao ; Xian-Tai Wang ; Hong-Liang Lu ; Zhi Jin
Author_Institution :
Key Lab. of Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´an, China
Abstract :
A W-band two-stage amplifier MMIC has been developed using a InP-based high electron mobility transistor (HEMT) technology. The two-stage amplifier has been realized in combination with coplanar waveguide topology and cascode transistors, thus leading to a compact chip-size of 1.85 mm×0.932 mm and an excellent small-signal gain of 25.7 dB at 106 GHz. The successful design of the two-stage amplifier MMIC indicates the InP HEMT technology has a great potential for W-band applications.
Keywords :
III-V semiconductors; MMIC amplifiers; coplanar waveguides; high electron mobility transistors; indium compounds; microwave transistors; HEMT technology; InP; W-band applications; W-band two-stage amplifier MMIC; W-band two-stage cascode amplifier; cascode transistors; compact chip-size; coplanar waveguide topology; frequency 106 GHz; high electron mobility transistor technology; small-signal gain; two-stage amplifier MMIC; Coplanar waveguides; Educational institutions; HEMTs; Impedance; Indium gallium arsenide; Indium phosphide; Logic gates; HEMT; amplifier; cascode; coplanar waveguide;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628045
