Self-consistent quasi-static C-V characteristics of In1−xGaxSb XOI FET

Author

Kutubul Alam, Md Nur ; Islam, Md Shariful ; Islam, Md Rafiqul

Author_Institution

Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol., Khulna, Bangladesh

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

In_1-xGa_xSb XOI nFET is proposed and its capacitance-voltage (CV) characteristics are investigated. One dimensional coupled Schrödinger-Poisson equation is solved to calculate charge and hence to the capacitance. Well known SILVACO´s ATLAS device simulation package is used to carry out the simulation. It is found that the CV characteristic as well as the threshold voltage of the proposed device depend on different process parameters like doping concentration, channel composition, channel thickness, gate oxide and oxide thickness, and operating temperature. Doping dependent threshold voltage shift is related with maximum allowable doping level, and which is also important for understanding enhancement mode operation.

Keywords

III-V semiconductors; Poisson equation; Schrodinger equation; doping; field effect transistors; gallium compounds; indium compounds; In_1-xGa_xSb; SILVACO ATLAS device simulation package; XOI nFET; capacitance; capacitance-voltage characteristics; channel composition; channel thickness; doping concentration; doping level; enhancement mode operation; gate oxide; one-dimensional coupled Schrodinger-Poisson equation; operating temperature; oxide thickness; self-consistent quasistatic C-V characteristics; threshold voltage; Capacitance; Capacitance-voltage characteristics; Doping; Field effect transistors; Logic gates; Silicon; Temperature; CV characteristics; InGaSb XOI nFET; quasi-static CV; self-consistent analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628047

Filename

6628047