Title :
A ring oscillator based reliability structure for NBTI & PBTI measurement
Author :
Xiqing Wang ; Jie Hong ; Yandong He ; Ganggang Zhang ; Lin Han ; Xing Zhang
Author_Institution :
Inst. of Microelectron. & Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
Abstract :
A ring oscillator based structure in digital circuits is presented for measuring NBTI and PBTI effects. The proposed test structure enables simultaneous stress of all devices under tests in either NBTI or PBTI mode and measures frequency degradation or the threshold voltage shift. The threshold voltage shift due to NBTI or PBTI can be directly read out in the proposed circuit which has been designed in a 1.2V, 90nm technology.
Keywords :
CMOS digital integrated circuits; integrated circuit reliability; oscillators; NBTI; PBTI; digital circuits; frequency degradation; negative bias temperature instability; positive bias temperature instability; reliability test; ring oscillator based reliability structure; size 90 nm; threshold voltage shift; voltage 1.2 V; Monitoring; Reliability; TV; NBTI; PBTI; reliability test; ring oscillator;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628048
