Thermal conductivity measurements of ultra-thin single crystal silicon films using improved structure

The thermal conduction in ultra-thin single crystal silicon layers has a strong influence in self-heating of deep submicron transistors. Precise measurements of lateral thermal conductivity of single crystal silicon layers have great importance for thermal model construction of submicron transistors. The traditional steady-state joule heating method is improved by inducing symmetric structure and thermal isolation trench in suspended single crystal silicon membrane, and the novel structure is optimized using Ansys tools. The lateral thermal conductivity of the 50nm and 80nm single crystal silicon layers at temperature 293K are measured, which is 32Wm^-1K^-1 and 38 Wm^-1K^-1 respectively, compared to the bulk value, 148 Wm^-1K^-1, which agrees well with the BTE equation anticipation