• DocumentCode
    3474894
  • Title

    Low temperature synthesis of ZnO nanotubes based hydrogen sensors

  • Author

    Bohr-Ran Huang ; Jun-Cheng Lin

  • Author_Institution
    Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan
  • fYear
    2013
  • fDate
    3-5 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A facile method has been developed to synthesize zinc oxide nanotubes (ZNTs) based hydrogen sensors at low temperature. ZnO nanorods (ZNRs) are first synthesized using the aqueous chemical process at 90 °C for 3 h, and then cooled down and maintained at 50 °C for a certain time (t = 6 h, 12 h and 18 h, respectively). ZNRs are transformed to ZNTs after the low temperature self-etching process. The ZNTs can provide a larger surface area than the pristine ZNRs for adsorbing additional gas ions, along with more oxygen vacancies to effectively sense gas ions with t increased from 6 h to 18 h. It is found that the hydrogen response of all ZNT hydrogen sensors, which is about 2 times higher than that of the pristine ZNR sensor (13.1%, at 500 ppm). It is noted that the ZNTs for t = 18 h possess the highest oxygen vacancies and the best response for hydrogen sensing (29.6%, at 500 ppm).
  • Keywords
    II-VI semiconductors; etching; gas sensors; hydrogen; low-temperature techniques; nanorods; nanosensors; nanotubes; wide band gap semiconductors; zinc compounds; H; ZNR; ZNT; ZnO; aqueous chemical process; gas ion adsorption; gas sensor; hydrogen sensor; low temperature nanotubes synthesis; low temperature self-etching process; nanorod; temperature 50 degC; time 18 h; Temperature sensors; Hydrogen sensors; Oxygen vacancies; nanotube; zine oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
  • Conference_Location
    Hong Kong
  • Type

    conf

  • DOI
    10.1109/EDSSC.2013.6628051
  • Filename
    6628051