Fabrication and characterization of quantum Hall devices for the resistance standard at CMS

Author

Chen, K.Y. ; Huang, Chih-Ying ; Liang, C.T. ; Hang, D.R. ; Chang, Y.H. ; Chih-Ying Huang ; Shih-Fang Chen ; Li-Hung Lin ; Hsiao, J.C. ; Lin, Li-Hung ; Cheng, K.A.

Author_Institution

Dept. of Phys., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2010

fDate

13-18 June 2010

Firstpage

633

Lastpage

634

Abstract

We fabricated AlGaAs/GaAs heterostructure-based quantum Hall devices for the resistance standard at Center for Measurement Standards (CMS). The measurements using a Direct Current Comparator (DCC) show the consistency between the plateaus of v=2 and 4 at the temperature T=2 K, where v is the filling factor. On the other hand, the plateaus of higher filling factors may be susceptible to the reduced localization strength, under which the semiclassical effects can be important. The coexistence of localization-induced gaps and semiclassical transport is discussed.

Keywords

Hall effect devices; current comparators; electric current measurement; measurement standards; quantum Hall effect; CMS; center for measurement standard; direct current comparator; fabrication; filling factor; localization-induced gaps; quantum Hall devices; resistance standard; semiclassical effects; Collision mitigation; Current measurement; Electrical resistance measurement; Fabrication; Filling; Gallium arsenide; Materials science and technology; Measurement standards; Physics; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Precision Electromagnetic Measurements (CPEM), 2010 Conference on

Conference_Location

Daejeon

Print_ISBN

978-1-4244-6795-2

Type

conf

DOI

10.1109/CPEM.2010.5544175

Filename

5544175