DocumentCode
3474907
Title
2-GHz band ultra-low-voltage LC-VCO IC in 130nm CMOS technology
Author
Xin Yang ; Kangyang Xu ; Wei Wang ; Uchida, Yasuo ; Yoshimasu, Toshihiko
Author_Institution
Grad. Sch. of Inf., Waseda Univ., Kitakyushu, Japan
fYear
2013
fDate
3-5 June 2013
Firstpage
1
Lastpage
2
Abstract
An ultra-low-voltage LC-VCO IC has been demonstrated using 130nm CMOS technology. The LC-VCO IC includes a cross-coupled nMOSFET pair, a spiral inductor, MOS varactors and a buffer amplifier. The LC-VCO IC is designed, fabricated and fully evaluated on wafer. The VCO IC exhibits a phase noise of -137 dBc/Hz at 1 MHz offset from the 2.2 GHz carrier at a supply voltage of only 0.5 V.
Keywords
CMOS integrated circuits; MOS capacitors; amplifiers; inductors; low-power electronics; phase noise; varactors; voltage-controlled oscillators; CMOS technology; MOS varactors; buffer amplifier; cross-coupled nMOSFET pair; frequency 2 GHz; phase noise; size 130 nm; spiral inductor; ultra-low-voltage LC-VCO IC; voltage 0.5 V; Integrated circuits; MOSFET circuits; Phase noise; Power generation; Size measurement; LC-VCO; Low Phase Noise; Ultra-Low-Power;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location
Hong Kong
Type
conf
DOI
10.1109/EDSSC.2013.6628052
Filename
6628052
Link To Document