Title :
Unclamped inductive switching stress failure mechanism of LDMOS
Author :
Kumar, Vijay M. P. ; Shreyas, Grama Srinath ; Khaund, Chinmoy ; Shao-Ming Yang ; Sheu, G.
Author_Institution :
Dept. of Comput. Sci. & Inf. Eng., Asia Univ., Taichung, Taiwan
Abstract :
The failure mechanism of Unclamped Inductive Switching (UIS) stress on Laterally Diffused MOS (LDMOS) device has been investigated first time. Failure in LDMOS has been compared with the Vertical DMOS. Technology-computer-aided-design (TCAD) simulations and analytical solution reveal that the diffusion current dominates the avalanche current at the drain side to reduce the device stability which depends on the negative value of partial differentiation of diffusion current density with respect to temperature. It is observed that the variation in drain dose affects the diffusion current in turn varying the stability of the device.
Keywords :
MIS devices; current density; failure analysis; technology CAD (electronics); LDMOS device; LDMOS failure; TCAD simulations; avalanche current; device stability; diffusion current density; drain dose affects; laterally diffused MOS device; partial differentiation; technology-computer-aided design simulations; unclamped inductive switching stress failure mechanism; vertical DMOS; Numerical models; Stability analysis; Switches; LDMOS; UIS; drain doping;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628057
