Design and realization of a voltage detector based on current comparison in a 40nm technology

Author

Wu, S.Y. ; Chen, W.B. ; Ning, N. ; Li, Jie ; Liu, Yanbing ; Yu, Qian

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

A design of low-power voltage detector (VD) based on current comparison technology is presented. This VD samples the power supply voltage and converts the sampled voltage to a current which will be compared with a reference. The current comparison technology simplifies the design without use of the resistor string and voltage comparators, and thus reduces the core area. The VD detects three thresholds successively while keeping only one detecting portion working at a time to minimize power consumption. The VD is designed and realized in a standard 40nm process. The measurement result agrees well with designed parameters with 3s variations less than 100mV. Meanwhile, the power consumption keeps lower than 10μW.

Keywords

current comparators; low-power electronics; voltage measurement; current comparison technology; low-power voltage detector; power consumption; power supply voltage; size 40 nm; CMOS integrated circuits; CMOS technology; Detectors; Switches; Transistors; current comparator; low-voltage bandgap reference; voltage detector;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628058

Filename

6628058