• DocumentCode
    3475070
  • Title

    Study of porous silicon substrate for the integration of radiofrequency monolithic circuits

  • Author

    Capelle, M. ; Billoue, J. ; Gautier, G. ; Poveda, P.

  • Author_Institution
    GREMAN, Univ. Francois Rabelais, Tours, France
  • fYear
    2013
  • fDate
    3-5 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The silicon/porous silicon hybrid substrate is an interesting candidate for the integration of radiofrequency circuits. Thus, passive components can be integrated on the insulating porous silicon regions closed to the active devices integrated on silicon. Regarding to silicon, the hybrid substrate allows the improvment of RF circuits performances. To demonstrate it, coplanar waveguides and inductors have been integrated on glass, silicon and localised porous silicon substrates. Characterisation results show that substrate losses are reduced with the porous silicon substrate.
  • Keywords
    coplanar waveguides; elemental semiconductors; inductors; microwave circuits; porous semiconductors; silicon; RF circuits; Si; active devices; coplanar waveguides; inductors; passive components; porous silicon hybrid substrate; radiofrequency monolithic circuits; substrate losses; Radio frequency; Silicon; Substrates; coplanar waveguide; inductor; porous silicon; radiofrequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
  • Conference_Location
    Hong Kong
  • Type

    conf

  • DOI
    10.1109/EDSSC.2013.6628060
  • Filename
    6628060