DocumentCode
3475070
Title
Study of porous silicon substrate for the integration of radiofrequency monolithic circuits
Author
Capelle, M. ; Billoue, J. ; Gautier, G. ; Poveda, P.
Author_Institution
GREMAN, Univ. Francois Rabelais, Tours, France
fYear
2013
fDate
3-5 June 2013
Firstpage
1
Lastpage
2
Abstract
The silicon/porous silicon hybrid substrate is an interesting candidate for the integration of radiofrequency circuits. Thus, passive components can be integrated on the insulating porous silicon regions closed to the active devices integrated on silicon. Regarding to silicon, the hybrid substrate allows the improvment of RF circuits performances. To demonstrate it, coplanar waveguides and inductors have been integrated on glass, silicon and localised porous silicon substrates. Characterisation results show that substrate losses are reduced with the porous silicon substrate.
Keywords
coplanar waveguides; elemental semiconductors; inductors; microwave circuits; porous semiconductors; silicon; RF circuits; Si; active devices; coplanar waveguides; inductors; passive components; porous silicon hybrid substrate; radiofrequency monolithic circuits; substrate losses; Radio frequency; Silicon; Substrates; coplanar waveguide; inductor; porous silicon; radiofrequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location
Hong Kong
Type
conf
DOI
10.1109/EDSSC.2013.6628060
Filename
6628060
Link To Document