• DocumentCode
    3475156
  • Title

    Strain effects on valence band structure of In0.7Ga0.3As: From bulk to thin film

  • Author

    Pengying Chang ; Xiaoyan Liu ; Lang Zeng ; Jieyu Qin ; Gang Du

  • Author_Institution
    Inst. of Microelectron., Peking Univ., Beijing, China
  • fYear
    2013
  • fDate
    3-5 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Strain effects on valence band structure in bulk and thin film In0.7Ga0.3As was presented, including in-plane biaxial and uniaxial stress. The impact on energy band splitting and warping, and effective mass are evaluated by 6×6 k·p method. The dependence of the valence band structures on the body thickness was also studied.
  • Keywords
    III-V semiconductors; effective mass; gallium arsenide; indium compounds; semiconductor thin films; valence bands; In0.7Ga0.3As; body thickness; effective mass evaluation; energy band splitting; energy band warping; in-plane biaxial stress; in-plane uniaxial stress; six-band k.p method; strain effects; thin film; valence band structure; Compounds; Educational institutions; Logic gates; Strain; Stress; In0.7Ga0.3As; Six-band k·p method; Strain effect; Valence band structure;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
  • Conference_Location
    Hong Kong
  • Type

    conf

  • DOI
    10.1109/EDSSC.2013.6628065
  • Filename
    6628065
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3475156