• DocumentCode
    3475227
  • Title

    Process variability influence on complementary organic circuits characterictics

  • Author

    Guerin, M. ; Bergeret, E. ; Benevent, E. ; Pannier, P. ; Daami, Anis ; Coppard, R.

  • Author_Institution
    IM2NP, Marseille, France
  • fYear
    2013
  • fDate
    3-5 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper presents a study on the variability of N- and P-type organic transistors fabrication process and its consequences on organic circuits´ electrical performance. Model cards corresponding to the measured devices are carried out and permit to simulate organic circuits. A NAND gate, made of four transistors, is simulated, manufactured and electrically characterized. Even though an important dispersion among the transistors electrical characteristics is observed, all measured NAND gates are functional.
  • Keywords
    CMOS integrated circuits; MOSFET; circuit simulation; logic gates; organic semiconductors; semiconductor device models; N-type organic transistors fabrication process; NAND gate; P-type organic transistors fabrication process; complementary organic circuits characterictics; process variability influence; transistors electrical characteristics; Laser ablation; Logic gates; Transistors; Organic; circuit; digital; logic gates; model card; process dispersion;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
  • Conference_Location
    Hong Kong
  • Type

    conf

  • DOI
    10.1109/EDSSC.2013.6628069
  • Filename
    6628069