Temperature stabilized CMOS ring oscillator

Author

Mahato, Ajoy Kumar ; Samanta, Anik Kumar

Author_Institution

Dept. of Electron. & Commun., Nat. Inst. of Technol., Ravangla, India

fYear

2013

fDate

20-22 Dec. 2013

Firstpage

196

Lastpage

198

Abstract

This paper presents a new technique to improve the frequency stability and amplitude stability with respect to temperature of ring oscillator using CMOS technology at 500nm technology using 3 volts supply voltage with 100fF load capacitance. There are several proposed architecture for the improvement in frequency stability and amplitude stability of sinusoidal output waveform. Proposed structure 1 based on addition of feed-forward path increases the frequency stability and amplitude stability whereas the proposed structure 2 based on the addition of feedback path increases the frequency stability and amplitude stability with respect to temperature.

Keywords

CMOS analogue integrated circuits; circuit feedback; feedforward; frequency stability; oscillators; amplitude stability; capacitance 100 fF; feedback path; feedforward path; frequency stability; sinusoidal output waveform; size 500 nm; temperature stabilized CMOS ring oscillator; voltage 3 V; CMOS integrated circuits; CMOS technology; Circuit stability; MOSFET; Ring oscillators; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

MOOC Innovation and Technology in Education (MITE), 2013 IEEE International Conference in

Conference_Location

Jaipur

Print_ISBN

978-1-4799-1625-2

Type

conf

DOI

10.1109/MITE.2013.6756333

Filename

6756333