Title :
High UV-visible rejection ratio of dual-wavelength detecting MISIM UV sensor with a thin Al2O3 layer
Author :
Chang-Ju Lee ; Hyeon-Gu Cha ; Chul-Ho Won ; Jung-Hee Lee ; Sung-Ho Hahm
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu, South Korea
Abstract :
We proposed a dual wavelength detecting AlGaN/GaN MISIM UV sensor with a tunneling insulator layer to enhance the selectivity of the two wavelengths. Al2O3 and SiO2 were proven as effective layer materials to reduce the dark current density of the UV sensor. The fabricated UV sensors exhibited two cutoff wavelengths of 320 nm and 365 nm corresponding to the bandgaps of AlGaN and GaN. The sensor with a thin Al2O3 layer showed the lower leakage current and high UV-visible rejection ratio than that with an Al2O3 layer at the high bias conditions.
Keywords :
III-V semiconductors; MIS devices; alumina; aluminium compounds; current density; dark conductivity; gallium compounds; leakage currents; photodetectors; silicon compounds; thin film sensors; ultraviolet detectors; wide band gap semiconductors; AlGaN-GaN-Al2O3; AlGaN-GaN-SiO2; UV-visible rejection ratio; bias condition; dark current density reduction; dual wavelength detecting MISIM UV sensor; effective layer material; leakage current; metal-insulator-semiconductor-insulator-metal; thin layer; tunneling insulator layer; wavelength 320 nm; wavelength 365 nm; Atomic beams; Atomic layer deposition; Decision support systems; Dual band; Gallium nitride; Tunneling; AlGaN/GaN; Dual-wavelength detection; Metal-semiconductor-metal; Tunneling insulator; UV sensor;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628072
