Laser patterned junctionless neuron thin-films transistor arrays

Author

Li Qiang Zhu ; Qing Wan

Author_Institution

Ningbo Inst. of Mater. Technol. & Eng., Ningbo, China

fYear

2013

fDate

3-5 June 2013

Firstpage

1

Lastpage

2

Abstract

Indium-zinc-oxide (IZO) thin film transistors (TFT) have been fabricated on ITO/glass substrate with a laser scribing process at room temperature. Such transistors are composed of a bottom indium-tin-oxide (ITO) floating gate and multiples of in-plane control gates. The multiple input gates are not truly independent gates, capacitively coupling with the floating gate together, thus Neuron MOS (vMOS) operation is realized. The control gates, coupling with the floating gate, control the “on” and “off” of the neuron transistor. Robust AND logic is demonstrated on such neuron transistor.

Keywords

MOSFET; indium compounds; laser materials processing; logic gates; nanopatterning; semiconductor materials; thin film transistors; ITO-SiO₂; ITO-glass substrate; InZnO; bottom ITO floating gate; in-plane control gates; indium-zinc-oxide thin film transistors; laser patterned junctionless neuron thin-films transistor arrays; laser scribing process; neuron MOS operation; robust AND logic; temperature 293 K to 298 K; Logic gates; Substrates; Thin film transistors; AND Logic; Laser scribing; Neuron Thin-films transisotr (TFTs);

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of

Conference_Location

Hong Kong

Type

conf

DOI

10.1109/EDSSC.2013.6628075

Filename

6628075