Reliability Characteristics of a 150GHZ fT/fmax Si/SiGeC Heterojunction Bipolar Transistor Under Reverse, Forward and Mixed-Mode Stress

Major reliability characteristics of studied HBT infer dual conclusions. On a first level, similar electrical response to any type of stress is measured as HC are responsible for the creation of mid-gap defects, giving rise to a G-R leakage current component. A common basis for base current degradation model is thus provided. On a second level, acceleration factors, defects location, impact on LF noise and recovery behavior are different. Defect types are thus distinct. Degradation model, in turn, must be adapted to each type of stress