DocumentCode
3475483
Title
Field effect diode memory cell: Physics and design
Author
Badwan, Ahmad Z. ; Chbili, Zakariae ; Yang Yang ; Qiliang Li ; Ioannou, Dimitris E. ; Salman, Adnan Ahmed
Author_Institution
ECE Dept., George Mason Univ., Fairfax, VA, USA
fYear
2013
fDate
3-5 June 2013
Firstpage
1
Lastpage
2
Abstract
A dynamic memory cell (DRAM) based on the Field-Effect-Diode (FED) is presented, and with the help of the underlying device physics its operation is explained and guidelines for its design are presented. This cell is characterized by fast operation speed, wide read 0/1 margin, long retention time and it is compatible with CMOS technology.
Keywords
CMOS digital integrated circuits; field effect memory circuits; physics; semiconductor diodes; 0-1 margin; CMOS technology; DRAM; FED; device physics; dynamic memory cell; field effect diode memory cell; operation speed; retention time; Anodes; Films; Logic gates; Dynamic Memory Cell; Field Effect Diode; Silicon on Insulator;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location
Hong Kong
Type
conf
DOI
10.1109/EDSSC.2013.6628083
Filename
6628083
Link To Document