• DocumentCode
    3475541
  • Title

    NiSi Polysilicon Fuse Reliability in 65nm Logic CMOS Technology

  • Author

    Ang, Boon ; Tumakha, Sergey ; Im, Jay ; Paak, Sunhom

  • Author_Institution
    Xilinx Inc., San Jose, CA
  • fYear
    2006
  • fDate
    Oct. 16 2006-Sept. 19 2006
  • Firstpage
    89
  • Lastpage
    92
  • Abstract
    The programming characteristics and reliability of NiSi polysilicon fuse fabricated using 65nm logic CMOS technology were studied. Under optimal programming conditions, high post-program resistance can be achieved. These well programmed fuses showed good data retention, capable of meeting the operating lifetime requirement of most applications
  • Keywords
    CMOS logic circuits; circuit reliability; nickel compounds; programmable circuits; 65 nm; NiSi; NiSi polysilicon fuse reliability; data retention; logic CMOS technology; optimal programming conditions; post-program resistance; programming characteristics; Anodes; CMOS logic circuits; CMOS technology; Cathodes; Electric resistance; Electromigration; Fuses; Logic programming; Silicides; Voltage; NiSi; OTP; data retention; efuse; electromigration; fuse;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2006 IEEE International
  • Conference_Location
    South Lake Tahoe, CA
  • ISSN
    1930-8841
  • Print_ISBN
    1-4244-0296-4
  • Electronic_ISBN
    1930-8841
  • Type

    conf

  • DOI
    10.1109/IRWS.2006.305218
  • Filename
    4098695
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3475541