Title :
A simple leakage current model for polycrystalline silicon nanowire thin-film transistors
Author :
Hongyu He ; Jin He ; Wanling Deng ; Hao Wang ; Yue Hu ; Xiaoan Zhu ; Xueren Zheng
Author_Institution :
Shenzhen SOC Key Lab., Peking Univ., Shenzhen, China
Abstract :
A simple leakage current expression is presented for the polycrystalline silicon nanowire thin-film transistors. The thermal field emission mechanism is utilized to derive the expression. The model results are compared with the experimental data at different temperatures and voltages, and good agreements are obtained.
Keywords :
elemental semiconductors; leakage currents; nanowires; silicon; thin film transistors; Si; leakage current expression; leakage current model; polycrystalline silicon nanowire thin-film transistors; thermal field emission mechanism; Data models; Educational institutions; Leakage currents; Semiconductor device modeling; Silicon; Transistors; Thin-film transistor (TFT); leakage current; nanowire; polycrystalline silicon (poly-Si); thermal field emission;
Conference_Titel :
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
Conference_Location :
Hong Kong
DOI :
10.1109/EDSSC.2013.6628090
