DocumentCode
3475868
Title
Temperature dependence of Pd thin film cryo resistors
Author
Satrapinski, A. ; Hahtela, O. ; Savin, A.M. ; Novikov, S. ; Lebedeva, N.
Author_Institution
MIKES, Espoo, Finland
fYear
2010
fDate
13-18 June 2010
Firstpage
641
Lastpage
642
Abstract
Cryo resistors based on Pd thin films were designed and investigated in temperature range 50 mK - 300 K. The resistors in the range 100 kΩ - 1.3 MΩ were fabricated using thermal evaporation technique. Minimum temperature coefficient, -0.4 (37)·10-6/K, in temperature range 50 mK - 100 mK has been obtained for 20 nm thin film 560 kΩ resistor. Binary and decimal configuration of connection of resistive elements were used for flexible adjustment of resistance value.
Keywords
cryogenic electronics; palladium; thin film resistors; Pd; Pd thin film cryo resistors; minimum temperature coefficient; resistance 100 kohm to 1.3 Mohm; resistive elements; size 20 nm; temperature 50 mK to 100 mK; temperature 50 mK to 300 K; temperature dependence; thermal evaporation technique; Conductivity; Electrical resistance measurement; Resistors; Semiconductor device measurement; Substrates; Temperature dependence; Temperature distribution; Thermal resistance; Thickness measurement; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements (CPEM), 2010 Conference on
Conference_Location
Daejeon
Print_ISBN
978-1-4244-6795-2
Type
conf
DOI
10.1109/CPEM.2010.5544226
Filename
5544226
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