• DocumentCode
    3475881
  • Title

    A novel ESD self-protecting symmetric nLDMOS for 60V SOI BCD process

  • Author

    Yuan Wang ; Guangyi Lu ; Jian Cao ; Qi Liu ; Ganggang Zhang ; Xing Zhang

  • Author_Institution
    Key Lab. of Microelectron. Devices & Circuits (MoE), Peking Univ., Beijing, China
  • fYear
    2013
  • fDate
    3-5 June 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A novel symmetric n-type lateral diffusion MOS (sym-nLDMOS) is presented. Fabricated without any extra mask in a standard 0.18 μm 60 V SOI BCD process, the new sym-nLDMOS has an ability of electrostatic discharge (ESD) self-protection. The TLP measured results show about 1X improvement of It2 in the novel sym-nLDMOS. The output characteristics of the novel device are also be measured.
  • Keywords
    BiCMOS integrated circuits; MOSFET; electrostatic discharge; silicon-on-insulator; ESD self-protecting symmetric nLDMOS; SOl BCD process; Si; electrostatic discharge self-protection; output characteristics; size 0.18 mum; symmetric n-type lateral diffusion MOS; voltage 60 V; Earth Observing System; Performance evaluation; Standards; Electrostatic discharge (ESD); Transmission line pulse (TLP); silicon controlled rectifier (SCR); symmetric n-type lateral diffusion MOS (sym-nLDMOS);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of
  • Conference_Location
    Hong Kong
  • Type

    conf

  • DOI
    10.1109/EDSSC.2013.6628102
  • Filename
    6628102
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3475881