Product Reliability Trends, Derating Considerations and Failure Mechanisms with Scaled CMOS

Author

White, Mark ; Vu, Duc ; Nguyen, Duc ; Ruiz, Ron ; Chen, Yuan ; Bernstein, Joseph B.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA

fYear

2006

fDate

Oct. 16 2006-Sept. 19 2006

Firstpage

156

Lastpage

159

Abstract

As microelectronics is scaled into the deep sub-micron regime, space and aerospace users of advanced technology CMOS are reassessing how scaling effects impact long-term product reliability. The effects of electromigration (EM), time-dependent-dielectric-breakdown (TDDB) and hot carrier degradation (HCI and NBTI) wearout mechanisms on scaled technologies and product reliability are investigated, accelerated stress testing across several technology nodes is performed, and FA is conducted to confirm the failure mechanism(s)

Keywords

CMOS integrated circuits; electric breakdown; electromigration; failure analysis; hot carriers; integrated circuit reliability; integrated circuit technology; life testing; accelerated stress testing; advanced technology CMOS; deep submicron regime; derating considerations; electromigration effect; failure mechanism; failure mechanisms; hot carrier degradation; product reliability; scaled CMOS; scaling effects; time-dependent-dielectric-breakdown effect; wearout mechanisms; CMOS technology; Degradation; Electromigration; Failure analysis; Hot carriers; Human computer interaction; Microelectronics; Niobium compounds; Space technology; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 2006 IEEE International

Conference_Location

South Lake Tahoe, CA

ISSN

1930-8841

Print_ISBN

1-4244-0296-4

Electronic_ISBN

1930-8841

Type

conf

DOI

10.1109/IRWS.2006.305234

Filename

4098711